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5G communication frequency is high, energy efficiency is more importantCai Wenyin, technical director of delta Electric Capital communication infrastructure group, pointed out that in the future of the Internet of things, the amount of data to be processed by the data center will grow explosively, which will increase the demand for power supply and cooling equipment. But at the same time, customers will have more stringent requirements on energy efficiency. Because even a 1% increase in energy efficiency can create considerable energy-saving benefits for customers.Liang Zhengbai, director of Lianfa technology, shares the power challenges of 5G communication from the perspective of terminal devices. Liang Zhengbai pointed out that even in the Sub 6GHz band, 5G uses a higher communication frequency than 4G. In the RF front-end alone, the signal loss will increase by 1 ~ 2dB; in addition, the space left for the antenna inside the mobile phone will become smaller and smaller, and the performance of 5G mobile phone antenna will usually decrease by 0.5 ~ 1.5dB. Tim koene, chief technology officer of EFFECT PHOTONICS, said that when it comes to optoelectronic integrated circuits, the industry generally thinks of Silicon Photonics, and believes that silicon photons will have an overwhelming advantage in cost, which is difficult for other optoelectronic integrated circuits based on compound semiconductors to compete with.  SiC and GaN have their own advantages in terms of withstand voltage and output powerClaire Troadec, director of power and wireless division of yole Development, said that the power chip industry will have a revolutionary breakthrough about every 20 years, and GaN on Si and SiC will be the key players leading the new revolution. However, due to the different material properties, the suitable application markets of the two components are also different. Generally speaking, with the withstand voltage of 600-650 V as the boundary, the application above this interval will be mainly SiC; the market below this interval will be the main battlefield of GaN.For individual applications, the most important applications of SiC are electric vehicles, rail transportation and electric vehicle charging stations; the most important applications of GaN are consumer power supply, followed by electric vehicles and UPS. Gan Kun technology chief Zhan Yiren believes that the application potential of GaN in the field of power supply has been concerned since 2010. At that time, the industry was quite optimistic about its development prospect, and many manufacturers invested in it. However, due to the different characteristics of GaN and silicon and different operation modes, there are quite a number of problems encountered in the initial stage of commercialization, and the development is not as smooth as expected. It is only in the last year or two that GaN technology has really reached a mature stage and can be commercialized in large quantities. Stephen Coates, general manager of GaN Systems Asia, pointed out that after years of development, the ecosystem of power transistors made of GaN materials has gradually matured. Not only there are quite a number of standard products in the market, but also the price is very competitive. In the past, the reliability of components that customers had the most doubts about is no longer a problem. In addition to consumer power supply, GaN Systems also has customers in server, industrial equipment, energy storage and other fields, launching application products using GaN power components; automotive Tier 1 customers are in the design and introduction stage. It is the best proof that the reliability of GaN components is no longer a problem that these vertical industries, which have strict requirements on the quality and reliability of components, begin to adopt. St, whose product line spans GaN and SiC, believes that although the two products overlap in application, due to the differences in technical characteristics, product separation will naturally form. Filippo Di Giovanni, marketing manager of Italian French strategy, pointed out that the overlap between GaN and SiC applications lies in applications with output power of 1-30kw. GaN has obvious advantages for applications with output power lower than 1kW, and SiC should be used for applications with output power higher than 30kW. Testing, etching and packaging are in place one after another, and wide gap components are expected to take offQiu Jizong, director of Sunmoon, pointed out that in the past decades, the packaging of power chips has been pursuing miniaturization, better heat dissipation performance and better electrical characteristics, and the packaging technology used has become increasingly complex. In the early years, almost all power chips were packaged by wire, but in recent years, power chips packaged by flip chip have become more and more common.In order to further achieve a higher degree of integration in a single package, many chip manufacturers have developed the packaging technology of integrating active and passive components on the same substrate, and launched products that look like chips but are actually power modules. In the detection part, Zhou Faye, regional product marketing manager of KLA, said that as far as SiC is concerned, the most important thing is the defect detection before wafer production, because the probability of SiC wafer defects is high, so the wafer defect detection before production is very critical. The most difficult part of GaN devices is that the etching process can not damage the structure of GaN, otherwise it will have a negative impact on the reliability of GaN devices. Therefore, for GaN devices, the detection focuses on the detection after etching. As for the etching part, Dave Thomas, vice president of SPTS systems, believes that the most challenging part of SiC etching lies in how to speed up the etching speed and detect the end point of processing. Due to the high hardness of SiC, it is difficult to etch the material rapidly. In addition, because the silicon carbide transistors will adopt the trench structure in the future, it means that the end point of processing will be in the blind area. It is a relatively challenging task to control the etching depth properly through the end point detection. In terms of GaN etching, as Zhou Faye said, the GaN layer is very sensitive to the damage caused by the etching process, so in the etching process, we must slow down and proceed carefully. At present, SPTS has been able to control the reaction furnace in the limit condition that the plasma is about to disappear, so as to minimize the etching speed and avoid damage to the component structure as much as possible. |
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