Quasi-Monocrystalline GaN Thin Films First "Heteroepitaxy" on Glass Substrates
2021/8/3 | Read: 24935
On August 1, according to the Daily Science and Technology, Liu Zhongfan, academician of the Chinese Academy of Sciences, president of Peking University/Beijing Graphite Institute, cooperated with Liu Zhiqiang, researcher of Semiconductor Research Institute of the Chinese Academy of Sciences, and Gao Peng, researcher of Physics Institute of Peking University, to propose a nanocolumn-assisted van der Waals epitaxyFor the first time in the world, a continuously flat quasi-single crystal GaN film has been successfully epitaxized on a glass substrate and a blue light-emitting diode (LED) has been prepared.
Liu Zhongfan said that this result is a typical "0 to 1" style original breakthrough.
It is reported that this study uses graphene lattices to guide the lattice arrangement of nitrides, to achieve the epitaxy of nitrides on amorphous glass, and to obtain high-quality quasi-single crystal thin films.They further developed a blue-light LED structure with an internal quantum efficiency of 48.7%.In addition, they made full use of the weak van der Waals force at the interface to mechanically peel off the growing epitaxy and prepare flexible LED samples.
Liu Zhongfan said that this study provides a new idea for the industrial application of two-dimensional materials such as graphene, and is expected to develop innovative preparation technology for nitrides, solve the bottleneck of advanced semiconductor development technology, and have important application prospects in new display, flexible electronics and other fields.
At the same time, this technology reduces the dependence of nitrides on single crystal substrates through heteroepitaxy, which is important for expanding the selection range of semiconductor epitaxy substrates, enriching the concept of semiconductor heteroepitaxy, and achieving on-chip material assembly and heteroepitaxy integration for the post-molar era.