Source: Jiwei

Dr. Lu Min pointed out that in recent years, the government has attached great importance to integrated circuits and supported the implementation of policies. The contents of the government include industry chain cultivation, research support, personnel training, project investment promotion, domestic intensification and so on. With the support of national policy, the third generation semiconductor has ushered in great development.

 

In 2019, the global power device market will be $580 million, SiC $500 million and GaN $80 million. There are 180000 silicon carbide substrates in the world, and the market scale is 200 million US dollars. The Chinese market has 60000 tablets.

 

According to Dr. Lu Min, the SiC market is growing at a growth rate of 40% per year and is expected to reach 20.2 billion US dollars by 2030. The annual growth rate of GaN market is also 40%, and the market size will reach 2.7 billion US dollars in 2030.

 

Dr. Lu Min also pointed out that in recent years, the domestic production capacity has been increasing. In 2019, the production capacity of Si based GaN epitaxial wafers converted to 6 inches is about 200000 pieces / year, and that of Si based GaN devices converted to 6 inches is about 190000 pieces / year.

 

Finally, Dr. Lu Min said that the third generation semiconductors are pregnant with opportunities in the crisis, and the localization is just in time. The Sino US trade war, semiconductor downturn, new crown epidemic, oil price and stock market fluctuations, and the third industrial transfer setback have all caused adverse effects on industrial development. However, the rapid rise of new application market, the increase of precise support (top-level design) by governments at all levels, and the sound development of internal circulation also bring new opportunities for domestic substitution.